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| Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC converters, and in general purpose high frequency switching applications. QUICK REFERENCE DATA SYMBOL VCE IC Ptot VCEsat Eoff PARAMETER Collector-emitter voltage Collector current (DC) Total power dissipation Collector-emitter on-state voltage Turn-off Energy Loss MAX. 800 12 85 3.5 0.5 UNIT V A W V mJ PINNING - TO220AB PIN 1 2 3 tab gate collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c g 1 23 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VCE VCGR VGE IC IC ICLM ICM Ptot Tstg Tj PARAMETER Collector-emitter voltage Collector-gate voltage Gate-emitter voltage Collector current (DC) Collector current (DC) Collector Current (Clamped Inductive Load) Collector current (pulsed peak value, on-state) Total power dissipation Storage temperature Junction Temperature CONDITIONS RGE = 20 k Tmb = 25 C Tmb = 100 C Tj Tjmax. VCL 500 V Tj Tjmax. Tmb = 25 C MIN. -5 - 55 MAX. 800 800 30 12 6 20 30 85 150 150 UNIT V V V A A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Junction to mounting base Junction to ambient CONDITIONS In free air TYP. 60 MAX. 1.47 UNIT K/W K/W October 1994 1 Rev.1.100 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A STATIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL V(BR)CES VGE(TO) ICES ICES IECS IGES VCEsat PARAMETER Collector-emitter breakdown voltage Gate threshold voltage Zero gate voltage collector current Zero gate voltage collector current Reverse collector current Gate emitter leakage current Collector-emitter saturation voltage CONDITIONS VGE = 0 V; IC = 0.25 mA VCE = VGE; IC = 1 mA VCE = 800 V; VGE = 0 V; Tj = 25 C VCE = 800 V; VGE = 0 V; Tj =125 C VCE = -5 V; VGE = 0 V VGE = 30 V; VCE = 0 V VGE = 15 V; IC = 6 A VGE = 15 V; IC = 12 A MIN. 800 3 TYP. 4 10 0.1 0.1 10 2.4 3.1 MAX. 5.5 100 1 5 100 3.5 UNIT V V A mA mA nA V V DYNAMIC CHARACTERISTICS Tmb = 25 C unless otherwise specified SYMBOL gfe Cies Coes Cres td on tr Eon td off tf Eoff td on tr Eon td off tf Eoff PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-on Energy Loss Turn-off delay time Turn-off fall time Turn-off Energy Loss Turn-on delay time Turn-on rise time Turn-on Energy Loss Turn-off delay time Turn-off fall time Turn-off Energy Loss CONDITIONS VCE = 15 V; IC = 3 A VGE = 0 V; VCE = 25 V; f = 1 MHz MIN. 1.5 TYP. 4 400 45 15 20 30 0.25 170 200 0.25 20 30 0.25 200 400 0.5 MAX. 750 80 40 270 400 0.5 350 800 1 UNIT S pF pF pF ns ns mJ ns ns mJ ns ns mJ ns ns mJ IC = 6 A; VCC = 500 V; VGE = 15 V; RG = 25; Tj = 25C; Inductive Load Energy Losses include all 'tail' losses IC = 6 A; VCC = 500 V; VGE = 15 V; RG = 25; Tj = 125C; Inductive Load Energy Losses include all 'tail' losses October 1994 2 Rev.1.100 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A 1E+01 Zth j-mb / (K/W) 30 D= IC / A 20 15 BUK8Y4-800A 10 1E+00 0.5 0.2 0.1 0.05 0.02 20 9 1E-01 8 10 tp T t 1E-02 0 P D tp D= 7 VGE / V = 6 0 1E+01 1E-03 1E-07 T 1E-05 1E-03 t/s 1E-01 0 5 10 VCE / V 15 20 Fig.1. Transient thermal impedance Z th j-mb = f(t) ; parameter D = tp/T PD% Normalised Power Derating Fig.4. Typical output characteristics, Tj=25 C. IC=f(VCE); parameter VGE IC / A VGE / V = BUK8Y4-800A 15 10 20 120 110 100 90 80 70 60 50 40 30 20 10 0 30 10 0 0 20 40 60 80 100 Tmb / C 120 140 0 1 Tj / C = 25 150 3 5 2 4 VCEsat / V 6 Fig.2. Normalised power dissipation. PD% = 100.PD/PD 25C = f(Tmb) IC / A BUK854-800 Fig.5. Typical on-state characteristics IC=f(VCE); parameters Tj,VGE IC / A Tj / C = 25 150 BUK8Y4-800A 100 30 ICLM 10 20 1 10 0.1 0 200 400 600 VCE / V 800 1000 0 0 2 4 6 VGE / V 8 10 12 Fig.3. Turn-off Safe Operating Area conditions: Tj Tjmax. ; RG = 50 Fig.6. Typical transfer characteristics IC=f(VGE) ; conditions: VCE=15 V; parameter Tj October 1994 3 Rev.1.100 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A 8 7 6 5 4 3 2 1 0 gfe / S BUK8Y4-800A 1000 C / pF BUK854-800A Cies 100 Coes 10 0 10 IC / A 20 30 Cres 0 10 20 VDS / V 30 40 Fig.7. Typical transconductance, Tj = 25 C. gfe = f(IC); conditions: VCE = 15 V VGE / V BUK8Y4-800A Fig.10. Typical capacitances, Cies, Coes, Cres. C = f(VCE); conditions: VGE = 0 V; f = 1MHz. dVCE/dt (V/ns) BUK8Y4-800A 16 14 12 10 8 6 4 2 0 12 10 8 6 4 2 0 0 5 10 15 QG / nC 20 25 30 1 10 Rg / Ohm 100 1000 Fig.8. Typical turn-on gate-charge characteristics. VGE = f(QG); conditions: IC = 6 A; VCE = 500 V t / ns BUK8Y4-800A Fig.11. Typical turn-off dVCE/dt vs. RG conditions: IC = 6 A; VCL = 500 V; Tj = 125 C E / mJ BUK8Y4-800A 500 0.7 0.6 400 0.5 300 0.4 200 tf td(off) 0.3 0.2 0.1 E(on) E(off) 100 0 0 20 40 60 80 Tj / C 100 120 140 0 0 20 40 60 80 Tj / C 100 120 140 Fig.9. Typical Switching Times vs. Tj conditions: IC = 6 A; VCL = 500 V; RG = 25 Fig.12. Typical Switching losses vs. Tj conditions: IC = 6 A; VCL = 500 V; RG = 25 October 1994 4 Rev.1.100 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A 10000 t / ns BUK8Y4-800A 2 E(off) / mJ BUK8Y4-800A td(off) 1000 tf 1.5 1 100 0.5 10 1 10 Rg / Ohm 100 1000 0 1 10 Rg / Ohm 100 1000 Fig.13. Typical Switching Times vs. RG conditions: IC = 6 A; VCL = 500 V; Tj = 125 C Fig.16. Typical Energy loss at turn-off vs. RG conditions: IC = 6 A; VCL = 500 V; Tj = 125 C E(off) / mJ BUK8Y4-800A 500 t / ns BUK8Y4-800A 2 400 tf 1.5 VCL / V = 500 300 400 1 300 200 td(off) 100 0.5 0 0 0 5 IC / A 10 15 0 5 10 IC / A 15 20 Fig.14. Typical Switching Times vs. IC conditions: VCL = 500 V; RG = 25 ; Tj = 125C Fig.17. Typical Energy loss at turn-off vs. IC conditions: VCL = 500 V; RG = 25 ; Tj = 125C; parameter VCL I IC 90% VCC = VCL Lc t p : adjust for correct Ic tr tf td(on) VGE td(off) t VCE 10% V D.U.T. RG VGE IC measure 90% tc 10% 0V 0R1 t Fig.15. Test circuit for inductive load switching times. Fig.18. Inductive Load Switching Times definitions. October 1994 5 Rev.1.100 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.19. TO220AB; pin 2 connected to mounting base. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for TO220 envelopes. 3. Epoxy meets UL94 V0 at 1/8". October 1994 6 Rev.1.100 Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor (IGBT) BUK854-800A DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1994 7 Rev.1.100 |
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